MELVILLE, N.Y., March 13, 2025 -- AIP Publishing is excited to announce that the first issue of APL Electronic Devices, its newest open access journal, is now available online.
APL Electronic Devices is a bold new journal at the intersection of multiple communities, including theory/modeling, experimental/applied physics, and materials/engineering. Its aim is to build interdisciplinary connections and industry-academic partnerships that will accelerate discovery.
"This first issue of APL Electronic Devices marks the beginning of an exciting journey, showcasing pioneering research, innovative technologies, and groundbreaking advancements in the field," said APL Electronic Devices Editor-in-Chief, Prof. Sohini Kar-Narayan. "With open access to high-quality scientific content, we aim to foster a vibrant community of researchers and enthusiasts from both academia and industry who are passionate about shaping the future of electronic devices. We invite you to explore, engage, and contribute to this exciting new venture!"
In the inaugural issue's editorial, Prof. Kar-Narayan notes that the launch of APL Electronic Devices comes at an important time for the field — with demands from new technologies like artificial intelligence, robotics, quantum computing, neural networks, and bioelectronics continuing to grow. Keeping up with it all means finding sustainable, scalable approaches to modern problems. APL Electronic Devices seeks to foster that journey of discovery.
"This is an exciting day, not only for AIP Publishing but also for the field of electronic device research," said AIP Publishing's Chief Publishing Officer, Dr. Penelope Lewis. "Research in this field touches nearly every aspect of modern life. It's an honor and a privilege to welcome Prof. Kar-Narayan, the APL Electronic Devices editorial team, and this ever-growing research community to AIP Publishing. We look forward to seeing this new journal flourish."
The APL Electronic Devices team includes Prof. Sohini Kar-Narayan (University of Cambridge), Prof. Yee Sin Ang (Singapore University of Technology and Design), Prof. Wanyi Nie (University at Buffalo), and Dr. Marko Tadjer (U.S. Naval Research Laboratory).
The following articles are now available online in the first issue of APL Electronic Devices:
Editorial:
Welcome to the first issue of APL Electronic Devices!
Sohini Kar-Narayan
Review:
Recent advances in nanogenerators for wearable electronic devices
Daniel M. Tiruneh and Hanjun Ryu
Articles:
High temperature operation and failure of Ga2O3 Schottky barrier diodes: an in-situ TEM study
Nahid Sultan Al-Mamun, Jian-Sian Li, Aman Haque, Doug Wolfe, Fan Ren and Stephen J. Pearton
Sustainable polymer materials for triboelectric and hybrid energy harvesting
T. Rodrigues-Marinho, R. Brito-Pereira, G. Pace, C. R. Tubio, Senentxu Lanceros-Mendez and Pedro Costa
Ultra-High Permittivity BaTiO3 (ε = 230) on Al2O3/AlGaN/GaN MISHEMTs for Field-Management in High-Voltage RF Applications
Kyle Liddy, Weisong Wang, Stefan Nikodemski, Christopher Chae, Kevin D. Leedy, Jean-Pierre Bega, Nolan S. Hendricks, Elizabeth A. Sowers, Ahmad E. Islam, Jinwoo Hwang, Siddharth Rajan and Andrew J. Green
Impact of Quantum Confinement on Source-to-Drain Tunneling and Sub-Threshold Behavior of Ultra-Thin-Body MOSFETs at Cryogenic Temperatures Nalin Vilochan Mishra and Aditya S. Medury
High Breakdown Voltage Quasi-Vertical PN Diode with Optimized Multiple Junction Termination Extensions
Jingyang Zhang, Wei Huang, Wai Lun Au Yeung, Yinan Zhang, Wenhao Zhang, David Wei Zhang and Zhaojun Liu
Ultralow Subthreshold Swing of 9 mV/dec for Planar Bulk GaAs MOSFETs at 4 K in Quantum Computing Applications
Lawrence B. Young, Yen-Hsun Glen Lin, H. W. Wan, Jun Liu, Y. T. Cheng, Bo-Yuan Chen, Kun-Ming Chen, Hsiao-Wen Chang, Ming-Jye Wang, J. Kwo and Minghwei Hong
Plasma-etch-free β-Ga2O3-NiO-PtOx merged PiN Schottky diode with high-voltage stress reliability
Joseph A. Spencer, Yuan Qin, Alan G. Jacobs, Boyan Wang, Neeraj Nepal, Hannah N. Masten, Matthew Porter, Bixuan Wang, Geoffrey M. Foster, Akito Kuramata, Karl Hobart, Travis J. Anderson, Yuhao Zhang and Marko J. Tadjer
Road Bump Triboelectric Generator Excited by a Small Number of Actuations for Powering Bluetooth Communications
Ahmad Delbani, Dimitri Galayko, Malal Kane and Philippe Basset
Impact of Magnetic Ion Substitution on the Crystal Structure of Multiferroic Aurivillius Phases
Jennifer Halpin, Michael Schmidt, Roger W. Whatmore and Lynette Keeney
Incomplete Donor Ionization Based 2D-Charge Density and Drain Current Model for δ-doped β-(AlxGa1-x)2O3/Ga2O3 HFET
Akash Patnaik and Pankaj Sharma
Ultrawide Bandgap LiGa5O8/β-Ga2O3 Heterojunction p-n Diodes
Vijay Gopal Thirupakuzi Vangipuram, Kaitian Zhang, Dong S. Yu, Lingyu Meng, Christopher Chae, Yibo Xu, Jinwoo Hwang, Wu Lu and Hongping Zhao
